Monolithic silicon waveguide photodiode utilizing surface-state absorption and operating at 10 Gb/s
نویسندگان
چکیده
منابع مشابه
Monolithic coupling of a SU8 waveguide to a silicon photodiode
We present quantitative results of light coupling from SU8 waveguides into silicon p-n photodiodes in monolithically integrated structures. Multimode, 12 mm thick, and 20 mm wide SU8 waveguides were fabricated to overlap 403180 mm photodiodes, with three different waveguide-photodiode overlap lengths. The attenuation due to leaky-mode coupling in the overlap area was then calculated from photoc...
متن کاملCharacterization Methods for Silicon Photodiode and Silicon Sub-Surface Properties
OF DOCTORAL DISSERTATION Author Name of the dissertation Date of manuscript Date of the dissertation Monograph Article dissertation (summary + original articles)
متن کاملWaveguide-integrated telecom-wavelength photodiode in deposited silicon.
We demonstrate photodiodes in deposited polycrystalline silicon at 1550 nm wavelength with 0.15 A/W responsivity, 40 nA dark current, and gigahertz time response. Subband absorption is mediated by defects that are naturally present in the polycrystalline material structure. The material exhibits a moderate absorption coefficient of 6 dB/cm, which allows the same microring resonator device to ac...
متن کاملDesign and Performance of an Erbium-Doped Silicon Waveguide Detector Operating at 1.5 m
A new concept for an infrared waveguide detector based on silicon is introduced. It is fabricated using silicon-on-insulator material, and consists of an erbium-doped p–n junction located in the core of a silicon ridge waveguide. The detection scheme relies on the optical absorption of 1.5m light by Er ions in the waveguide core, followed by electron–hole pair generation by the excited Er and s...
متن کاملMetal-optic cavity for a high efficiency sub-fF germanium photodiode on a silicon waveguide.
We propose two designs of nanoscale sub-fF germanium photodiodes which are efficiently integrated with silicon waveguides. The metal-optic cavities are simulated with the finite difference time domain method and optimized using critical coupling concepts. One design is for a metal semiconductor metal photodiode with <200 aF capacitance, 39% external quantum efficiency, and 0.588 (λ/n)³ cavity v...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optics Express
سال: 2014
ISSN: 1094-4087
DOI: 10.1364/oe.22.010710